Sven Rogge
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room: B218 |
My research is concerned with the electronic properties of semiconductors at the atomic scale. The smallest functional level of a semiconductor is a single impurity atom. A key ingredient in this field of atomic-scale electronics is the manipulation of the orbitals of such an impurity. We study the response of the orbitals to magnetic as well as electric fields. The latter allows access to the quantum properties of a singe dopant in a nanostructure. This research is primarily based on transport experiments on Si nano MOSFETs. Future experiments will link the transport process to the electron spin to investigate not only the charge but also spin properties of the impurity. I also work on self-assembled atomic wires and dopant structures, both measured (STM) and prepared in UHV.
Meetings: Silicon Nanoelectronics Workshop in Leiden
Selected Publications
Lansbergen G.P., Rahman R., Wellard C.J., Rutten P.E., Caro J., Collaert N., Biesemans S., Woo I., Klimeck G., Hollenberg L.C.L., Rogge S.
Quantum confinement and symmetry transition of a single gated donor electron in silicon
Nature Physics, doi:10.1038/nphys994 (2008)
Sellier H.,Lansbergen G.P.,CaroJ.,Collaert N.,Ferain I.,Jurczak M.,Biesemans S.,Rogge S.
Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors
Applied Physics Letters 90, 073502 (2007)
Sellier H.,Lansbergen G.P.,Caro J.,Collaert N.,Ferain I.,Jurczak M.,Biesemans S.,Rogge S. Transport spectroscopy of a single dopant in a gated silicon nanowire
Physical Review Letters 97, 206805 (2006)
Snijders P.C., Rogge S., Weitering H.H.
Competing periodicities in fractionally filled 1D bands.
Physical Review Letters 96, 076801 (2006)
Craciun M.F.,Rogge S.,den Boer M.J.L.,Margadonna S.,Prassides K.,Iwasa Y.,Morpurgo A.F.
Electronic Transport through Electron-Doped Metal Phthalocyanine Materials.
Advanced Materials 18, 320 (2006)
González C., Snijders P. C., Ortega J., Pérez R., Flores F., Rogge S., and Weitering H. H.,
Formation of Atom Wires on Vicinal Silicon.
Phys. Rev. Lett. 93, 126106 (2004)
Smit G.D.J., Rogge S., Caro, Klapwijk T.M.
Stark effect of shallow impurities in Si
Physical Review B 70, 035206 (2004)
Smit, G.D.J., S. Rogge, J. Caro, T.M. Klapwijk
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
Physical Review B 69, 035338 (2004)
G.D.J. Smit, S. Rogge, J. Caro, T.M. Klapwijk
Gate-induced ionization of single dopant atoms
Physical Review B 68, 193302 (2003)
G.D.J. Smit, S. Rogge, T.M. Klapwijk
Scaling of nano-Schottky-diodes
Applied Physics Letters 81, 3852-3854 (2002)
G.D.J. Smit, S. Rogge, T.M. Klapwijk
Enhanced tunneling across nanometer-scale metal-semiconductor interfaces
Applied Physics Letters 80, 2568-2570 (2002)
Our work in the news:
S. Hadlington, "Getting the dope on a single atom of dopant", Chemistry World 4, 21 (2007)
W. Knight, "Atom spied interfering with electron flow", Newscientist 27 Nov (2006)
Teaching:
Introduction to Quantum Mechanics (TN2012)
Physics of Semiconductor Nanostructures (AP3191)
Frontiers of Measurement (graduate course)
Introduction to solid-state physics (masters study course)
