Dr.ir. A.H.M. Smets

subjects
2011 - Photovoltaic Technologies
2011 - Photovoltaic Lab Course
2011 - Solar Energy
2010 - Solar Energy
2014 - Sustainable Energy Supply
2013 - Solar Energy
2014 - Photovoltaic Technologies
2014 - Solar Energy
2012 - Photovoltaic Technologies
2012 - Photovoltaic Lab Course
2015 - Solar Energy
2012 - Duurzame energie
2014 - Photovoltaic Lab Course
2012 - Solar Energy
2013 - Duurzame energie
2013 - Photovoltaic Lab Course
2013 - Photovoltaic Technologies
2015 - Photovoltaic Technologies
2016 - Sustainable Energy Supply
2016 - Photovoltaic Technologies
2017 - Sustainable Energy Supply
2017 - Renewable Energy
2017 - Photovoltaic Technologies
2016 - Solar Energy
2017 - Solar Energy (MOOC)
2017 - Internship MSc SET
2017 - Graduation Project
2017 - Sustainable Energy Technologies
2017 - Solar Energy
2016 - Sustainable Energy Technologies
2015 - Photovoltaic Lab Course
2016 - Solar Energy (MOOC)
2015 - Sustainable Energy Supply
2016 - Renewable Energy
2016 - System Integration Project II (individual)
2016 - Internship MSc SET
2016 - Graduation Project
ancillary activities
-Geen nevenwerkzaamheden -

2016-06-01 - 2018-06-01

publications
Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon during Annealing

peer reviewed : Y

IEEE Journal of Photovoltaics (2017) 9 pages , p. 421-429

authors

  • Jimmy Melskens
  • Stephan W H Eijt
  • Marc Schouten
  • Albert S. Vullers
  • Awital Mannheim
  • Henk Schut
  • Bart Macco
  • Miro Zeman
  • Arno H M Smets
New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopy

peer reviewed : Y

Journal of Physics: Conference Series (2017) 6 pages , p.

authors

  • Stephan Eijt
  • Wenqin Shi
  • A. Mannheim
  • Maik Butterling
  • Henk Schut
  • W Egger
  • M. Dickmann
  • C Hugenschmidt
  • B. Shakeri
  • R.W. Meulenberg
  • V. Callewaert
  • R Saniz
  • B Partoens
  • B Barbiellini
  • A Bansil
  • Jimmy Melskens
  • Miro Zeman
  • Arno Smets
  • M. Kulbak
  • G. Hodes
  • D. Cahen
  • Ekkes Brück
Solar fuel production by using PV/PEC junctions based on earth-abundant materials

peer reviewed : Y

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (2016) 5 pages , p. 3620-3624

authors

  • Paula Perez Rodriguez
  • Ibadillah Digdaya
  • Andrea Mangel Raventos
  • Michael Falkenberg
  • Ravi Vasudevan
  • Miro Zeman
  • Wilson Smith
  • Arno Smets
Photoelectrocatalytic oxidation of phenol for water treatment using a BiVO<sub>4</sub> thin-film photoanode

peer reviewed : Y

Journal of Materials Research (2016) 13 pages , p. 2627-2639

authors

  • Yasmina Bennani
  • Paula Perez-Rodriguez
  • Mathew J. Alani
  • Wilson A. Smith
  • Luuk C. Rietveld
  • Miro Zeman
  • Arno H M Smets
A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

peer reviewed : Y

Solar Energy Materials & Solar Cells (2016) 6 pages , p. 82-87

authors

  • RA Vasudevan
  • Z Thanawala
  • L Han
  • Thom Buijs
  • Hairen Tan
  • D Deligiannis
  • P Perez Rodriguez
  • IA Digdaya
  • WA Smith
  • M Zeman
  • AHM Smets
Highly efficient hybrid polymer and amorphous silicon multijunction solar cells with effective optical management

peer reviewed : Y

Advanced Materials (2016) 8 pages , p. 1-8

authors

  • H Tan
  • A Furlan
  • W Li
  • K Arapov
  • R Santbergen
  • MM Wienk
  • M Zeman
  • AHM Smets
  • RAJ Janssen
Solar Energy

peer reviewed : N

(2016) 462 pages , p.

authors

  • Arno Smets
  • Klaus Jäger
  • Olindo Isabella
  • René van Swaaij
  • Miro Zeman
Extracting large photovoltages from a-SiC photocathodes with an amorphous TiO2 front surface field layer for solar hydrogen evolution

peer reviewed : Y

Energy & Environmental Science (2015) 9 pages , p. 1585-1593

authors

  • IA Digdaya
  • L Han
  • TWF Buijs
  • M Zeman
  • B Dam
  • AHM Smets
  • WA Smith
Gradient dopant profiling and spectral utilization of monolithic thin-film silicon photoelectrochemical tandem devices for solar water splitting

peer reviewed : Y

Journal of Materials Chemistry A (2015) 8 pages , p. 4155-4162

authors

  • L Han
  • IA Digdaya
  • TWF Buijs
  • FF Abdi
  • Z Huang
  • R Liu
  • B Dam
  • M Zeman
  • WA Smith
  • AHM Smets
High pressure processing of hydrogenated amorphous silicon solar cells: relation between nanostructure and high open-circuit voltage

peer reviewed : Y

Applied Physics Letters (2015)

authors

  • M Fischer
  • H Tan
  • J Melskens
  • RA Vasudevan
  • M Zeman
  • AHM Smets
Highly transparent modulated surface textured front electrodes for high-efficiency multijunction thin-film silicon solar cells

peer reviewed : Y

Progress in Photovoltaics: research and applications (2015) 15 pages , p. 949-963

authors

  • H Tan
  • E Moulin
  • FT Si
  • J-W Schüttauf
  • M Stuckelberger
  • O Isabella
  • FJ Haug
  • C Ballif
  • M Zeman
  • AHM Smets

Professor

Arno Smets was born in 1974 in Maasbree in The Netherlands.  After finishing his high school education at the Bouwens van der Boye College in Panningen in 1992, he studied physics at the Eindhoven University of Technology (TU/e). In December 1997 he finished his Masters in the Equilibrium and Transport in Plasmas group at the Physics Department under supervision of Prof. Daan Schram. At the same group he performed under supervision of Prof. Richard van de Sanden his PhD. From this point in time, his work was mainly focused on plasma processing of thin silicon films for photovoltaic applications. In the spring of 2000, Arno Smets spent 3 months during a working visit at the group of Prof. C.R. Wronski at the Penn State University and to the group of Prof. R.W. Collins at Material Research Lab in State College, USA. Arno Smets defended on May 20th 2002 his PhD thesis: “Growth Related Material Properties of Hydrogenated Amorphous Silicon”.  After his PhD, he worked as a Post-doc within the Helianthos Project, which is a collaboration between Akzo Nobel (currently NUON Helianthos), Eindhoven University of Technology, Delft University of Technology, Utrecht University and TNO. In March 2005 Arno moved to Tsukuba in Japan and joined as a visiting Researcher the Research Center for Photovoltaics under leadership of Michio Kondo at the National Institute of Advanced Industrial Science and Technology (AIST). From January 2008-february 2010 he managed a collaboration between AIST in Japan, and the TU/e and NUON Helianthos in the Netherlands. From March 2010 Arno Smets is associate professor at the Delft University of Technology in the Netherlands in the Photovoltaic Material and Devices group of Prof. Miro Zeman at the faculty Electronic Engineering, Mathematics and Computer Sciences.

Arno Smets has worked on a wide variety of topics related to the plasma processing of thin silicon films for photovoltaic applications, mainly focused on the second generation technology. Among many of his research topics and achievements are: plasma technology development, development of high deposition rates of hydrogenated amorphous and microcrystalline silicon, large area deposition, development of novel in-situ diagnostics to monitor plasma processes, plasma-surface interaction and thin film growth, study of dust generation in plasma environments, study of the mechanisms involved in thin silicon growth with respect to deposition rate, temperature and ion induced film-modifications, fundamental understanding of microstructures and related properties of thin silicon films, study of instable thin silicon properties related to the Staebler-Wronski effect or oxidation of thin silicon films, processing of thin film silicon based photovoltaic devices and development of novel concepts to further enhance the efficiencies of thin film silicon photovoltaic devices.

 

CONTACT INFORMATION

Room:   LB 03.420
Phone:  +31 (0)15 27 88739
Telefax: +31 (0)15 27 82968
Skypename: arnosmets

e-mail

Prof.Dr. Arno Smets
Photovoltaic Materials and Devices
EWI Faculty - Delft University of Technology
Mekelweg 4
2628  C D   DELFT
The Netherlands

 

List of publications

T. Nagai, A.H.M. Smets, and M. Kondo,  Formation of SiH3 Radicals and Nanoparticles in SiH4-H2 Plasmas Observed by Time-Resolved Cavity Ringdown Spectroscopy, Jpn. J. Appl. Phys. 47, 7032 (2008).

A.H.M. Smets, T. Matsui, and M. Kondo, High-rate deposition of microcrystalline silicon p-i-n solar cells in the high pressure depletion regime, submitted to J. Appl. Phys. 104, 034508 (2008).

A.H.M. Smets, T. Matsui, and M. Kondo, Infrared analysis of the bulk silicon-hydrogen bonds as an optimization tool for high-rate deposition of microcrystalline silicon solar cells, Appl. Phys. Lett. 92, 033506 (2008).

T. Nagai, A.H.M.  Smets, and M. Kondo, Time resolved cavity ringdown spectroscopy on nanoparticle generation in a SiH4-H2 VHF plasma, J. Non-Cryst. Solids 354, 2096 (2008).

 A.H.M. Smets and M.C.M. van de Sanden, The relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment, Physical Review B. 76, 073202 (2007)

A.H.M. Smets, W.M.M. Kessels, and M.C.M. van de Sanden, The effect of ion-surface and ion-bulk interactions during hydrogenated amorphous silicon deposition, J. Appl. Phys. 102, 073523 (2007)

T. Nagai, A.H.M.  Smets, and M. Kondo,  Study of spatial distribution of SiH3 radicals in very high frequency plasma using cavity ringdown spectroscopy, Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol.45, no.10B, Oct. 2006, pp. 8095-8.

A.H.M. Smets and M. Kondo, The role of ion-bulk interactions during high rate deposition of microcrystalline silicon by means of the multi-hole-cathode VHF plasma, Journal of Non-Crystalline Solids, vol.352, no.9-20, 15 June 2006, pp. 937-40.

A.H.M. Smets, W.M.M.  Kessels, and M.C.M.  van de Sanden, Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growth, Applied Physics Letters, vol.86, no.4, 24 Jan. 2005, pp. 41909-1-3

J. Willekens, M. Brinza, T. Gungor, G.J.  Adriaenssens, M.  Nesladek, W.M.M. Kessels, A.H.M. Smets, and M.C.M. van de Sanden, Optical spectroscopy of the density of gap states in ETP-deposited a-Si:H, Journal of Non-Crystalline Solids, vol.338-340, 15 June 2004, pp. 244-8. 

I.M.P. Aarts, B. Hoex, A.H.M.Smets, R. Engeln, W.M.M. Kessels, and M.C.M. van de Sanden, Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy, Applied Physics Letters Vol. 84, No. 16, 19 April 2004, pp. 3079-3081.

W.M.M. Kessels, A.H.M. Smets, and M.C.M. van de Sanden, The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley-Rideal mechanism, Journal of Non-Crystalline Solids, vol.338-340, 15 June 2004, pp. 27-31. 

A.H.M. Smets, W.M.M. Kessels, and M.C.M. van de Sanden, Vacancies and voids in hydrogenated amorphous silicon, Applied Physics Letters, vol.82, no.10, 10 March 2003, pp. 1547-9

A.H.M. Smets, W.M.M. Kessels, and M.C.M. van de Sanden, Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth, Applied Physics Letters, vol.82, no.6, 10 Feb. 2003, pp. 865-7.

A.H.M. Smets, J.H. van Helden, and M.C.M. van de Sanden, Bulk and surface defects in a-Si:H films studied by means of the cavity ring down absorption technique, Journal of Non-Crystalline Solids, vol.299-302, pt.A, April 2002, pp. 610-14.

M. Brinza, G.J. Adriaenssens, K. Iakoubovskii, A. Stesmans, W.M.M. Kessels, A.H.M.  Smets, and M.C.M. van de Sanden, Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H, Journal of Non-Crystalline Solids, vol.299-302, pt.A, April 2002, pp. 420-4. 

W.M.M. Kessels, A.H.M. Smets, D.C. Marra, E.S. Aydil, D.C. Schram, M.C.M. van de Sanden MCM, On the growth mechanism of a-Si:H, Thin Solid Films, vol.383, no.1-2, 15 Feb. 2001, pp. 154-60. 

W.M.M. Kessels, R.J. Severens, A.H.M. Smets, B.A. Korevaar, G.J. Adriaenssens, D.C.  Schram, and M.C.M. van de Sanden, Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma,  Journal of Applied Physics, vol.89, no.4, 15 Feb. 2001, pp. 2404-13.

A.H.M. Smets, D.C. Schram, and M.C.M. van de Sanden,  In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma, Journal of Applied Physics, vol.88, no.11, 1 Dec. 2000, pp. 6388-94.

G.J. Adriaenssens, H.Z. Song, V.I. Arkhipov, E.V. Emelianova, W.M.M. Kessels, A.H.M. Smets, B.A. Korevaar, M.C.M. van de Sanden,  Analysis of time-of-flight photocurrents in a-Si : H deposited by expanding thermal plasma, Journal of Optoelectronics and Advanced Materials Vol. 2, No. 1, March 2000, pp. 31-42.

B.A. Korevaar, G.J. Adriaenssens, A.H.M. Smets, W.M.M. Kessels, H.-Z. Song, M.C.M.  van de Sanden, and D.C. Schram,  High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application, Journal of Non-Crystalline Solids, vol.266-269, May 2000, pp. 380-4. 

A.H.M. Smets, M.C.M. van de Sanden, and D.C  Schram, In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma, Thin Solid Films, vol.343-344, April 1999, pp. 281-4. 

M.C.M. van de Sanden, M.F.A.M. van Hest, A. de Graaf, A.H.M. Smets, K.G.Y. Letourneur, M.G.H. Boogaarts, and D.C. Schram, Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C:H, Diamond and Related Materials, vol.8, no.2-5, March 1999, pp. 677-81. 

P.M. Koenraad, J.M. Shi, A.F.W. van de Stadt, A.H.M. Smets, J.T. Devreese, J.H. Wolter JH, F.M. Peeters, and J.A.A.J. Perenboom,  Spatial correlation effects of charged impurities on electron mobility in &delta;-doped quantum barriers,  Superlattices and Microstructures, vol.21, no.2, 1997, pp. 237-40.