Recipe

Gasses:

SF6

12.5 sccm

He

10 sccm
Pressure1.00 Pa
RF Power40 W
Bias potential-120 V

Etch characteristics

Etch rate: 40 nm/min
Anisotropic

Selectivity

Etch rate of AZ 1420: 90 nm/min (selectivity: 0.4)
Etch rate of EPR resist: 90 nm/min (selectivity: 0.4)
Etch rate of Cr: 5 nm/min (selectivity: 8)
Etch rate of Al: 5 nm/min (selectivity: 8)
Etch rate of C: 15 nm/min (selectivity: 4)
Etch rate of SiO2: 20 nm/min (selectivity: 2)

Remarks

Etch rate depends on the amount of incorporated oxygen
Reproducibility: 15 %