Recipe
| Gasses: | |
SF6 | 300.0 sccm |
O2 | 15.0 sccm |
| |
| Pressure | 1.80 Pa |
| ICP Power | 1100 W |
| rf bias | -136 V |
| Substrate temperature | -30 °C |
Etch characteristics
| Etch rate: 78 nm/min @ -30 C | |
| Temperature dependence | R(T)=581.65 e-1483.37/T [T in Kelvin] |
| Graph: |
Remarks
| Below -60 C, etching becomes sputtering. |
| Etch rate dependence on rf biasing not yet investigated. |
| Reproducible within 1 nm |