Dry Etch Recipe for Mo in Fluorine Based RIE

Recipe

Gases:

SF6

12.5 sccm
He10 sccm
Pressure1.00 Pa
RF Power40 W
Bias potential-200 V

Etch characteristics

Etch rate: to be determined
Anisotropy: to be determined

Selectivity

Etch rate of AZ 1420: 90 nm/min
Etch rate of EPR resist: 90 nm/min

Remarks

Etch rate does not depend on bake temperature of the resist
Large aspect ratio dependence; over etch may be required
Reproducibility: 5 %
This process is also used for descumming (15-20 s) and sharpening resist profiles