Dry Etch Recipe for Silicon in Chlorine Based ICP
Reactor
| ICP Chlorine etcher |
Recipe
| Gasses: | |
Cl2 | 9.0 sccm |
O2 | 1.0 sccm |
| Pressure | 0.7 Pa |
| RF Power | 100 W |
| Substrate temperature: | 65 °C |
Etch characteristics
| Anisotropic |
| Etch rate: ~2 nm/s |
| ICP Chlorine etcher |
| Gasses: | |
Cl2 | 9.0 sccm |
O2 | 1.0 sccm |
| Pressure | 0.7 Pa |
| RF Power | 100 W |
| Substrate temperature: | 65 °C |
| Anisotropic |
| Etch rate: ~2 nm/s |