Dry Etch Recipe for Silicon in Cryogenic ICP System

Recipe

Gasses:

SF6

440 scm

Gas O2

36 sccm

Pressure

4.31 Pa

RF ICP Power

1050 W

Bias voltage

-40 V

Temperature

-124 °C

Position

9 cm

Etch characteristics

Etch Rate
4 um/min for Si (100)
2 um/min for Si (111)
Anisotropic

Remarks

Etch characteristics depend on the crystal orientation maximum obtainable aspectratios: 
17 for Si(100)
8 for Si(111)
This process has been thoroughly investigated:
M.A. Blauw, Deep anisotropic dry etching of silicon micorstructures by high-density plasma, PhD Thesis, 2004, ISBN 90-9017644-6