Dry Etch Recipe for Ti in Chlorine Based ICP
Recipe
| Gasses: | |
Cl2 | 50.0 sccm |
| Pressure | 2.0 Pa |
| RF Power | 100 W |
| ICP Power | 400 W |
| Substrate temperature | 20 °C |
Etch characteristics
| Etch rate: 17 nm/min |
| Anisotropy: 90 % |
Selectivity
| Etch rate of AZ 1420: 75 nm/min |
Remarks
| Considerable loading effect |
| Reproducibility: 20 % |
| The wafer heats up considerably during etching. (mask choice!) |
| Recommended mask is hard baked AZ 1420 or HPR (120 0C) |