Dry Etch Recipe for W (sputtered) in Fluorine based RIE
Recipe
| Gases: | |
| SF6 | 12.5 sccm |
| He | 10 sccm |
| Pressure | 1.00 Pa |
| RF Power | 40 W |
| Bias potential | -120 V |
Etch characteristics
| Etch rate: 80 nm/min |
| Anisotropy: 80 % |
Selectivity
| Selective over all non-organic materials |
Remarks
| Anisotropy is somewhat substrate temperature dependent |
| Reproducibility: 15 % |