Products

Custom Wafers (100 mm) with
Epitaxy
Si, Intrinsic, Doped: B, P, As, also SiGe
Thermal oxidation
SiO2
LPCVD
- Si(poly and amorphous), PECVD (amorphous)
- SiO2 (from TEOS) - SiN (low stress and stoichiometric)
- SiC
PECVD
- SiO2 (from SiH4/O2 or TEOS) also BPSG
- Si3N4
- SiC
Evaporated
- Al, Au, Co, Cr, Fe, Ni, Pt, Pd, Ta, Ti
ALD
- Al2O3, TiO2
Sputtered
- Al, Al2O3, AlN, Al/Si
- Co/Al, Co/Fe
- Cr, CrN
- Cu
- Ge
- Mo, MoN, MoO3
- Ni/Fe
- Sb
- Si(doped)
- Ti, TiN
- Zr, ZrN
Bonding & Packaging
Sawing only
Separate Packages
Bonding & Packaging complete
Wet Si Etching
KOH, TMAOH

For details, prices and orders, please contact Info EKL
Bare Wafers (100mm)
Si [100], CZ, N type:
1- 5 Ohmcm, 525+/-15 mu
1-10 Ohmcm, 525+/-25 mu
5-15 Ohmcm, 525+/-50 mu
Si [100], CZ, P type:
1- 5 Ohmcm, 525+/-15 mu
1- 10 Ohmcm, 525+/-25 mu
5- 15 Ohmcm, 525+/-55 mu
Si Double Side Polished P type:
1- 5 Ohmcm,525+/-15 mu
1-10 Ohmcm,525+/-25 mu
1-5 Ohmcm,300+/- 5 mu
SOI:
SiO2 400nm, Si 340 nm
Glass:
Eagle2000
Sodium Containing
Devices
Nanoreactors