Dr. R.A.C.M.M. van Swaaij

publicaties
Bekijk de publicaties in Pure
vakken
2006 - Electronic Circuits
2006 - Elektronische schakelingen
2006 - Semiconductor Components and Technology
2007 - Electronic Circuits
2007 - Semiconductor Device Physics
2007 - Advanced Device Physics
2009 - Orientation to Electrical Power Engineering
2009 - Semi-conductor Device Physics
2008 - Extra Project (max. 15EC)
2008 - Electronic Circuits
2008 - Semiconductor Device Physics
2008 - Advanced Device Physics
2008 - Directed Studies in Microelectronics
2009 - Introduction to Microelectronics
2008 - Introduction to Microelectronics
2009 - Extra Project (max. 15EC)
2009 - Advanced Device Physics
2011 - Photovoltaic Technologies
2011 - Photovoltaic Lab Course
2010 - Extra Project (max. 15EC)
2010 - Introduction to Microelectronics
2010 - Advanced Device Physics
2010 - Semi-conductor Device Physics
2010 - Orientation to Electrical Power Engineering
2011 - Orientation to Electrical Power Engineering
2011 - Extra Project (max. 15EC)
2011 - Advanced Device Physics
2011 - Semi-conductor Device Physics
2014 - Klassieke en Kwantummechanica
2015 - Klassieke en Kwantummechanica
2013 - Elektriciteit en Magnetisme A
2013 - Elektriciteit en Magnetisme B
2014 - Photovoltaic Technologies
2014 - Physics of Semiconductor Devices
2013 - Klassieke en kwantummechanica A
2012 - Physics of Semiconductor Devices
2012 - Photovoltaic Technologies
2012 - Photovoltaic Lab Course
2012 - Orientation to Electrical Power Engineering
2013 - Klassieke en kwantummechanica B
2014 - Photovoltaic Lab Course
2014 - Elektronica
2013 - Photovoltaic Lab Course
2013 - Photovoltaic Technologies
2013 - Physics of Semiconductor Devices
2016 - Internship SET
2016 - Elektronica
2016 - System Integration Project II (individual)
2017 - Extra Project (max. 15EC)
2016 - Klassieke en Kwantummechanica
2016 - Semiconductor Device Physics
2016 - Photovoltaic Technologies
2017 - Klassieke en Kwantummechanica
2017 - Photovoltaic Technologies
2015 - System Integration Project II (Individual)
2015 - Graduation Project
2015 - Internship MSc SET
2015 - Elektronica
2015 - Semiconductor Device Physics
2018 - Semiconductor Device Physics
2018 - Photovoltaic Technologies
2018 - Extra Project (max. 15EC)
2018 - Graduation Project
2017 - Elektronica
2018 - Internship SET
2018 - Klassieke en Kwantummechanica
2018 - Elektronica
2017 - Semiconductor Device Physics
2017 - Internship SET
2017 - Graduation Project
2016 - Graduation Project
2015 - Photovoltaic Technologies
2015 - Photovoltaic Lab Course
2019 - Extra Project (max. 15EC)
2019 - Photovoltaic Technologies
2019 - Graduation Project
2019 - Internship SET
2019 - Elektronica
2019 - Joint Interdisciplinary Project
2019 - Semiconductor Device Physics
nevenwerkzaamheden
Geen nevenwerkzaamheden -

2018-01-01 - 2020-01-01

Associate Professor

René van Swaaij was born in 1966 in Maastricht, the Netherlands. After finishing his secondary school education in 1985, he went to Utrecht University to study physics. He received his degree in Physics, with a focus on Experimental Physics, in 1990 and soon after started his PhD research at the same university. During his PhD research René worked on amorphous silicon based photoconductors for xerography under the guidance of Prof. Werner van der Weg en Dr. John Bezemer. Following his PhD, René did his national service and subsequently worked from 1995 to 1997 at the University of Surrey, Guildford (UK), in the large-area electronics group of the Department of Electronic and Electrical Engineering. He researched the stability of amorphous-silicon based thin-film diodes for AM-LCD application. This research was carried out in co-operation with Philips Research Laboratories, Redhill (UK), under the guidance of Prof. John Shannon.

In 1997 he joined the group Electronic Components, Technology and Materials (ECTM) of the Delft University of Technology, the Netherlands, which is part of the Delft Institute of Microsystems and Nanoelectronics (DIMES), to work on amorphous-silicon based solar cells. In 2002 René was appointed as Associate Professor within ECTM. Since 1 January 2009 he works in the group Photovoltaic Materials and Devices of the Department of Electrical Sustainable Energy. His research interests mainly lie with the fast deposition of amorphous silicon layers and the physics underlying the operation of amorphous silicon solar cells. He is in charge of several projects in the field of thin-film silicon solar cells and lectures on semiconductor device physics in BSc and MSc courses at the Faculty of Electrical Engineering, Mathematics, and Computer Science. René has authored and co-authored more than 80 journal and conference papers.

 

CONTACT INFORMATION

Room:   LB 03.410
Phone:  +31 (0)15 27 87259
Telefax: +31 (0)15 27 82968

e-mail

Dr. R.A.C.M.M Swaaij, van (René)
Photovoltaic Materials and Devices
EWI Faculty - Delft University of Technology
Mekelweg 4
2628  C D  DELFT
The Netherlands

List of publications

 

2014

Guangtao Yang, René A. C. M. M. van Swaaij, Olindo Isabella, and Miro Zeman, A novel way of texturing glass for microcrystalline silicon thin film solar cells application, accepted for publication in Progress in Photovoltaics: Research and Application; DOI: 10.1002/pip.2550.

D. Zhang, D. Deligiannis, G. Papakonstantinou, R. A. C. M. M. van Swaaij, and M. Zeman, Optical enhancement of silicon heterojunction solar cells with hydrogenated amorphous silicon carbide emitter, accepted for publication in IEEE J. Photovoltaics; DOI: 10.1109/JPHOTOV.2014.2344768.

D. Deligiannis, S. Alivizatos, A. Ingenito, D. Zhang, M. van Sebille, R. A. C. M. M. van Swaaij, and M. Zeman, Wet-chemical treatment for improved surface passivation of textured silicon heterojunction solar cells, Energy Procedia 55, pp. 197-202 (2014); DOI: 10.1016/j.egypro.2014.08.117.

J. M. Westra, R. A. C. M. M. van Swaaij, P. Sutta, K. Sharma, M. Creatore, and M. Zeman, Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films, Thin Solid Films 568, pp. 38-43 (2014); DOI: 10.1016/j.tsf.2014.07.040.

F. T. Si, D. Y. Kim, R. Santbergen, H. Tan, R. A. C. M. M. van Swaaij, A. H. M. Smets, O. Isabella, and M. Zeman, Quadruple-junction thin-film silicon-based solar cells with high open-circuit voltage, Appl. Phys. Lett. 105, 063902 (2014); DOI: 10.1063/1.4892890.

G. Yang, R. A. C. M. M. van Swaaij, S. Dobrovolskiy, and M. Zeman, Determination of defect density of state distribution of amorphous silicon solar cells by temperature derivative capacitance-frequency measurement, J. Appl. Phys. 115, 034512 (2014); DOI: 10.1063/1.4862308.

D. Y. Kim, R. A. C. M. M. van Swaaij, and M. Zeman, Optical and electrical simulation of µc‑Si:H solar cells: effect of substrate morphology and crystalline fraction, IEEE J. Photovoltaics 4(1), pp. 22-27 (2014); DOI: 10.1109/JPHOTOV.2013.2287770.

 

2013

D. Zhang, I. A. Digdaya, R. Santbergen, R. A. C. M. M. van Swaaij, P. Bronsveld, M. Zeman, J. A. M. van Roosmalen, and A. W. Weeber, Design and fabrication of a-SiOx/ITO double-layer anti-reflective coating for heterojunction silicon solar cells, Sol. Energy Mater. Sol. Cells 117, 132 (2013); DOI: 10.1016/j.solmat.2013.05.044.

Guangtao Yang, René A. C. M. M. van Swaaij, Sergiy Dobrovolskiy, and Miro Zeman, Textured substrate for high-efficiency n-i-p µc-Si:H solar cells, in: Proceedings of 37th IEEE-PVSC, Tampa, USA, pp. 624-627 (2013); DOI: 10.1109/PVSC.2013.6744228.

K. Jäger, M. Fischer, R. A. C. M. M. van Swaaij, and M. Zeman, Designing optimized nano textures for thin-film silicon solar cells, Optics Express 21(S4), p. A656; DOI: 10.1364/OE.21.00A656.

M. G. De Greef, F. A. Rubinelli, R. van Swaaij, Modeling characteristic curves of solar cells and optical detectors with the Simmon-Taylor approximation, Thin Solid Films 540, 227 (2013); DOI: 10.1016/j.tsf.2013.05.169.

S. Perraud, E. Quesnel, S. Parola, J. Barbé, V. Muffato, P. Faucherand, C. Morin, K. Jarolimek, R. A. C. M. M. van Swaaij, M. Zeman, S. Richards, A. Kingsley, H. Doyle, K. Linehan, S. O’Brien, I. M. Povey, M. E. Pemble, L. Xie, K. Leifer, K. Makasheva, and B. Despax, Silicon nanocrystals: Novel synthesis routes for photovoltaic applications, Phys. Status Solidi A 210(4), pp.649-657 (2013); DOI: 10.1002/pssa.201200533.

 

2012

R. A. C. M. M. van Swaaij, A. H. M. Smets, and M. Zeman, Thin-film silicon technology for highly-efficient solar cells, in: Proceedings of the 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Portland, Oregon, 1-3 October 2012, p. 120.

G. Yang, R. A. C. M. M. van Swaaij, S. Dobrovolskiy, and  M. Zeman, The influence of post H2-plasma treatment to the performance of solar cells, in: Proceedings of the 27th EUPVSEC, Frankfurt, Germany, 24-28 September 2012, pp. 2639-2642, DOI: 10.4229/27thEUPVSEC2012-3DV.2.22.

D. Zhang, R. A. C. M. M. van Swaaij, and M. Zeman, Influence of intrinsic layer thickness in the emitter and BSF of HIT solar cells, in: Proceedings of the 27th EUPVSEC, Frankfurt, Germany, 24-28 September 2012, pp. 1482-1485; DOI: 10.4229/27thEUPVSEC2012-2BV.6.3.

K. Jäger, M. Fischer, R. A. C. M. M. van Swaaij, and M. Zeman, An algorithm for finding optimized interface morphologies in thin film silicon solar cells, Mater. Res. Soc. Symp. Proc. 1426, pp. 75-80 (2012); DOI: 10.1557/opl.2012.886.

R. A. C. M. M. van Swaaij, R. Kind, and M. Zeman, Recombination efficacy in a-Si:H p-i-n devices, J. Non-Cryst. Solids 358, pp. 2190-2193 (2012); DOI:10.1016/j.jnoncrysol. 2011.12.037.

K. Jäger, M. Fischer, R. A. C. M. M. van Swaaij, and M. Zeman, A scattering model for nano-textured interfaces and its application in optoelectrical simulations of thin-film silicon solar cells, J. Appl. Phys. 111, 083108 (2012); DOI: 10.1063/1.4704372.

Michael A. Wank, Rene van Swaaij, Richard van de Sanden, and Miro Zeman, Hydrogenated amorphous silicon p–i–n solar cells deposited under well controlled ion bombardment using pulse-shaped substrate biasing, Prog. Photovolt.: Res. Appl. 20, pp. 333-342 (2012); DOI: 10.1002/pip.1157.

A. H. M. Smets, M. A. Wank, B. Vet, M. Fischer, R. A. C. M. M. van Swaaij, M. Zeman, D. C. Bobela, C. R. Wronski, and M. C. M. van de Sanden, The relation between the bandgap and the anisotropic nature of hydrogenated amorphous silicon, IEEE J. Photovoltaics 2(2), pp. 94-98 (2012); DOI: 10.1109/JPHOTOV.2011.2180701.

R. Santbergen, T. L. Temple, R. Liang, A. H. M. Smets, R. A. C. M. M. van Swaaij, and M. Zeman, Application of plasmonic silver island films in thin-film silicon solar cells, J. Opt. 14, 024010 (2012); DOI:10.1088/2040-8978/14/2/024010.

 

2011

R. Kind, R. A. C. M. M. van Swaaij, F. A. Rubinelli, S. Solntsev, and M. Zeman, Thermal ideality factor of hydrogenated amorphous silicon p-i-n solar cells, J. Appl. Phys. 110, 104512 (2011); DOI:10.1063/1.3662924.

S. N. Agbo, M. Putri, R. A. C. M. M van Swaaij, P. Sutta, and M. Zeman, Investigation of crystallinity depth profile in thin film µc-Si:H on different substrates, in: Proceedings of the 26th EUPVSEC, Hamburg, Germany, 21-25 September 2011, pp. 2653-2657; DOI:10.4229/26thEUPVSEC2011-3AV.2.19.

K. Jäger, M. Fischer, M. Abatzis, R. A. C. M. M. van Swaaij, S. Solntsev, and M. Zeman, A full scattering model for integrated opto-electrical modelling of solar cells, in: Proceedings of the 26th EUPVSEC, Hamburg, Germany, 21-25 September 2011, pp. 2311-2315; DOI:10.4229/26thEUPVSEC2011-3BO.1.1.

D. Zhang, A. Tavakoliyaraki, Y. Wu, R. A. C. M. M. van Swaaij and M. Zeman, Influence of ITO deposition and post annealing on HIT solar cell structures, Energy Procedia 8, pp. 207-213 (2011); DOI:10.1016/j.egypro.2011.06.125.

K. Jäger, O. Isabella, R. A. C. M. M. van Swaaij, and M. Zeman, Angular resolved scattering measurements of nano-textured substrates in a broad wavelength range, Meas. Sci. Technol. 22, 105601 (2011); DOI:10.1088/0957-0233/22/10/105601.

V. A. Popovich, J. M. Westra, R. A. C. M. M. van Swaaij, M. Janssen, I. J. Bennett, and I. M. Richardson, Raman Spectroscopy characterization of residual stresses in multicrystalline silicon solar wafers and solar cells: relation to microstructure, defects and processing conditions, presented at 37th IEEE-PVSC, Seattle, U. S. A. (2011).

R. Santbergen, J. Sap, T. Temple, S. Solntsev, A. H. M. Smets, R. A. C. M. M. van Swaaij, and M. Zeman, Effective medium analysis of silver nanoparticle films for plasmonic light trapping in solar cells, Mater. Res. Soc. Symp. Proc. 1322, B06-11 (2011); DOI:10.1557/opl.2011.1296.

 

2010

M. A. Wank, R. A. C. M. M. van Swaaij, P. Kudlacek, M. C. M. van de Sanden, and M. Zeman, Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing, J. Appl. Phys. 108, 103304 (2010); DOI:10.1063/1.3505794.

S. N. Agbo, J. Krč, R. A. C. M. M. van Swaaij, and M. Zeman, Optimization of the material properties of the p-i interface in thin film microcrystalline silicon solar cell, Sol. Energy Mater. Sol. Cells. 94, 1864 (2010); DOI:10.1016/j.solmat.2010.06.034.

S. N. Agbo, R. A. C. M. M. van Swaaij, and M. Zeman, Effect of seeding on the matierial property of µc-Si:H layer and the spectral response of µc-Si:H solar cell, in: Proceedings of the 25th EPVSEC, Valencia, Spain, 6-10 September 2010, pp. 3288-3291; DOI:10.4229/25thEUPVSEC2010-3AV.2.48.

M. A. Wank, A. Illiberi, F. D. Tichelaar, R. A. C. M. M. van Swaaij, M. C. M. van de Sanden, and M. Zeman, Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition, Phys. Status Solidi C 7, 571 (2010); DOI:10.1002/pssc.200982835.

S. N. Agbo, R. A. C. M. M. van Swaaij, M. Zeman and P. Sutta, Predicting μc-Si:H crystal orientation from Raman measurement under polarized light, Phys. Status Solidi C 7, 708 (2010); DOI:10.1002/pssc.200982799.

J. M. Westra, V. Vavruňková, P. Šutta, R. A. C. M. M. van Swaaij, and M. Zeman, Formation of thin-film crystalline silicon on glass observed by in-situ XRD, in: Proceeding of inorganic and nanostructured photovoltaics of E-MRS 2009 Spring Meeting, Strasbourg, France, 7-12 June 2009; Energy Procedia 2, 235 (2010); DOI:10.1016/j.egypro.2010.07.034.

I. T. Martin, M. A. Wank, M. A. Blauw, R. A. C. M. M. van Swaaij, W. M. M. Kessels, and M. C. M. van de Sanden, The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si:H thin films, Plasma Sources Sci. Technol. 19, 015012 (2010); DOI:10.1088/0963-0252/19/1/015012.

 

2009

D. Zhang, S. N. Agbo, M. Tijssen, R. A. C. M. M. van Swaaij, and M. Zeman, Conductivity optimization of p-type silicon thin layer in application of HIT solar cells, in: Proceedings of SAFE2009, Veldhoven, the Netherlands, 2009 (STW Technology Foundation, Utrecht, the Netherlands, 2009), p. 182.

S. N. Agbo, J. Krč, R. A. C. M. M. van Swaaij, and M. Zeman, Sensitivity analysis of model parameters of μc-Si:H solar cells on textured glass/ZnO:Al substrate, in: Proceedings of SAFE2009, Veldhoven, the Netherlands, 2009 (STW Technology Foundation, Utrecht, the Netherlands, 2009), p. 133.

J. M. Westra, P. Šutta, T. Sontheimer, V. Vavruňkova, S. Gall, R. A. C. M. M. van Swaaij, and M. Zeman, Crystallization process of amorphous silicon on glass monitored by in-site XRD, in: Proceedings of the 24th EPVSEC, Hamburg, Germany, 21-25 September 2009, pp. 2490-2493; DOI:10.4229/24thEUPVSEC2009-3AV.1.4.

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, On the surface roughness development of ETP-CVD a-Si:H deposition at low growth rates, Appl. Phys. Lett. 95, 021503 (2009); DOI:10.1063/1.3179151.

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Ion assisted ETP-CVD a-Si:H at well defined ion energies, Mater. Res. Soc. Symp. Proc. 1153, A17-06 (2009); DOI:10.1557/PROC-1153-A17-06.

B. E. Pieters, H. Stiebig, M. Zeman, and R. A. C. M. M. van Swaaij, Determination of the mobility gap of intrinsic μc-Si:H in p-i-n solar cells, J. Appl. Phys. 105, 044502 (2009); DOI:10.1063/1.3078044.

Heinz-Christoph Neitzert, Manuela Ferrara, Wolfgang Fahrner, Maximilian Scherff, Arjen Klaver, and René van Swaaij, Photocurrent enhancement induced by interface modifications due to low dose electron irradiation of amorphous/crystalline silicon heterojunctions, in: Proceeding of 29thInternational Conference on Physics of Semiconductors, Rio de Janeiro, Brazil, 27 July – 1 August 2008; AIP Conference Proceedings 1199, 17-18 (2009).

 

2008

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Surface roughness analysis of ETP-CVD a-Si:H thin films deposited at high growth rates around 1 nm/s, in: Proceedings of SAFE2008, Veldhoven, the Netherlands, 2008 (STW Technology Foundation, Utrecht, the Netherlands, 2008), p. 516.

S. N. Agbo, R. A. C. M. M. van Swaaij, and M. Zeman, Effect of deposition parameters of µc‑Si:H solar cell absorber layer on spectral response, in: Proceedings of SAFE2008, Veldhoven, the Netherlands, 2008 (STW Technology Foundation, Utrecht, the Netherlands, 2008), p. 440.

S. de Jong, R. J. Hamann, E. Maddox, G. J. Vollmuller, C. A. H. Schuurbiers, R. A. C. M. M. van Swaaij, and W. J. Ubbels, The Delfi-n3Xt nanosatellite: Space weather research and qualification of microtechnology, in: Proceedings of the 59th International Astronautical Congress 2008, Glasgow, Scotland UK, September 2008.

R. A. C. M. M. van Swaaij and A. Klaver, Comparison of amorphous silicon solar cell performance following light and high-energy electron-beam induced degradation, J. Non-Cryst. Solids 354, 2464 (2008); DOI:10.1016/j.jnoncrysol.2007.09.025.

A. Klaver and R. A. C. M. M. van Swaaij, Modeling of light-induced degradation of amorphous silicon solar cells, Sol. Energy Mater. Sol. Cells 92, 50 (2008); DOI:10.1016/j.solmat.2007.08.010.

 

2007

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, In-situ study by spectroscopic ellipsometry of ETP-CVD a-Si:H, in: Proceedings of SAFE2007, Veldhoven, the Netherlands, 2007 (STW Technology Foundation, Utrecht, the Netherlands, 2007), p. 558.

R. Jiménez Zambrano, R. A. C. M. M. van Swaaij, M. C. M van de Sanden, and M. Zeman, Influence of externally applied bias and atomic hydrogen formation on the properties of nanocrystaline silicon deposited by expanding thermal plasma chemical vapor deposition, in: Proceedings of SAFE2007, Veldhoven, the Netherlands, 2007 (STW Technology Foundation, Utrecht, the Netherlands, 2007), p. 521.

M. A. Wank, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Manipulating the hydrogen-bonding configuration in ETP-CVD a-Si:H, Mater. Res. Soc. Symp. Proc. 989, 523 (2007); DOI:10.1557/PROC-0989-A22-04.

R. Jiménez Zambrano, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Optimisation of microcrystalline silicon deposited by expanding thermal plasma chemical vapor deposition for solar-cell application, Mater. Res. Soc. Symp. Proc. 989, 165 (2007); DOI:10.1557/PROC-0989-A07-02.

2006

M. A. Wank, I. Martin, M. A. Blauw, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Control of the ion-energy distribution and measurement of ion currents with a non-sinusoidal substrate bias, in: Proceedings of SAFE2006, Veldhoven, the Netherlands, 2006 (STW Technology Foundation, Utrecht, the Netherlands, 2006), p. 488.

A. Klaver, V. Nádaždy, M. Zeman, and R. A. C. M. M. van Swaaij, Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon, Appl. Phys. Lett. 89, 022119 (2006).

A. Gordijn, M. N. van den Donker, F. Finger, E. A. G. Hamers, G. J. Jongerden, W. M. M. Kessels, R. Klein, A. M. B. van Mol, J. K. Rath, B. Rech, R. Schlatmann, R. E. I. Schropp, B. Stannowski, H. Stiebig, M. C. M. van de Sanden, R. A. C. M. M. van Swaaij, and M. Zeman, Flexible a-Si/μc-Si tandem modules in the Helianthos project, in: Proceedings of the 4th WCPEC, Hawaii, U. S. A., 7-12 May 2006, pp. 1716-1719.

R. A. C. M. M. van Swaaij, R. Jiménez Zambrano, C. Smit, and M. C. M. van de Sanden, New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor deposition, J. Non-Cryst. Solids 352, 933 (2006).

 

2005

A. Klaver, J. W. Metselaar, M. Zeman, and R. A. C. M. M. van Swaaij, Defect-creation mechanisms in high-energy electron irradiated a-Si:H solar cells, in: Proceedings of SAFE2005, Veldhoven, the Netherlands, 2005 (STW Technology Foundation, Utrecht, the Netherlands, 2005), p. 23.

C. Smit, A. Klaver, B. A. Korevaar, A. M. H. N. Petit, D. L. Williamson, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, High-rate deposition of microcrystalline silicon with an expanding thermal plasma, Thin Solid Films 491, 280 (2005).

T. Dekker, R. Schlatmann, B. Stannowski, R. A. C. M. M. van Swaaij, J. W. Metselaar, and M. Zeman, Correlation between surface-textured tin- and zinc oxide substrates and current generation in amorphous silicon solar cells, presented at the 20th EPVSEC, Barcelona, Spain, 6-10 June 2005, p. 1517.

A. H. M. Smets, A. M. H. N. Petit, V. Nádaždy, W. M. M. Kessels, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Improvement of the material properties by employing external RF substrate bias during a-Si:H deposition by a remote expanding thermal plasma, presented at the 20th EPVSEC, Barcelona, Spain, 6-10 June 2005, p. 1639.

A. M. H. N. Petit, V. Nádaždy, A. H. M. Smets, M. Zeman, M. C. M. van de Sanden, and R. A. C. M. M. van Swaaij, Improvement of expanding thermal plasma amorphous silicon solar cell by means of substrate rf-biasing, presented at the 20th EPVSEC, Barcelona, Spain, 6-10 June 2005, p. 1616.

A. Klaver, J. W. Metselaar, M. Zeman, and R. A. C. M. M. van Swaaij, Development of a model to predict EOL efficiency of amorphous silicon solar cells for space applications, presented at the 20th EPVSEC, Barcelona, Spain, 6-10 June 2005, p. 1612.

A. H. M. Smets, A. M. H. N. Petit, V. Nádaždy, W. M. M. Kessels, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, External RF substrate biasing as a tool to improve the material properties of hydrogenated amorphous silicon at high deposition rates by means of the expanding thermal plasma, in: Proceedings of the 31st IEEE-PVSC, Orlando, Florida, 3-7 January 2005, p. 1389.

A. Klaver, J. W. Metselaar,  M. Zeman, and R. A. C. M. M. van Swaaij, Simulations on 1-MeV electron-beam irradiated amorphous silicon solar cells with varying thickness, in: Proceedings of the 31st IEEE-PVSC, Orlando, Florida, 3-7 January 2005, p. 1440.

 

2004

A. M. H. N. Petit, A. H. M. Smets, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, On the reproducibility of a-Si:H deposited with an expanding thermal plasma, in: Proceedings of SAFE2004, Veldhoven, the Netherlands, 2004, (STW Technology Foundation, Utrecht, the Netherlands, 2004), p. 714.

C. Smit, R. A. C. M. M. van Swaaij, E. A. G. Hamers, and M. C. M. van de Sanden, The role of the silyl radical in plasma deposition of microcrystalline silicon, J. Appl. Phys. 96, 4076 (2004).

A. M. H. N. Petit, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Hydrogen Injection in ETP Plasma Jet for Fast-Deposition of High-Quality a-Si:H, Mater. Res. Soc. Symp.  Proc. 808, 359 (2004).

A. Klaver, J. M. Warman, M. P. de Haas, J. W. Metselaar, and R. A. C. M. M. van Swaaij, Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC, Mater. Res. Soc. Symp.  Proc. 808, 165 (2004).

B. E. Pieters, M. Zeman, R. A. C. M. M. van Swaaij, and W. J. Metselaar, Optimization of a-SiGe:H solar cells with graded intrinsic layers using integrated optical and electrical modeling, Thin Solid Films 451, 294 (2004).

 

2003

C. Smit, R. A. C. M. M. van Swaaij, H. Donker, A. M. H. N. Petit, W. M. M. Kessels, and M. C. M. van de Sanden, Determining the material structure of microcrystalline silicon from Raman spectra, J. Appl. Phys. 94, 3582 (2003).

E. Pincik, H. Kobayashi, H. Gleskova, M. Kucera, L. Ortega, M. Jergel, C. Falcony, R. Brunner, T. Shimizu, V. Nadazdy, M. Zeman, M. Mikula, M. Kumeda, and R. A. C. M. M. van Swaaij, Photoluminescence properties of a-Si:H based thin films and corresponding solar cells, Thin Solid Films 433, 344 (2003).

R. U. A. Khan, S. R. P. Silva, and R. A. C. M. M. van Swaaij, Polymeric amorphous carbon as p-type window within amorphous silicon solar cells, Appl. Phys. Lett. 82, 3979 (2003).

M. Zeman, V. Nadazdy, R. A. C. M. M. van Swaaij, and J. W. Metselaar, Role of charged defects in the light-induced degradation of single junction a-Si:H solar cells, edited by K. Kurokawa, L. L.  Kazmerski, B. McNelis, M. Yamaguchi, C.  Wronski, W. C. Sinke, in:
Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, Vol. 2, p. 1623 (2003).

C. Smit, D. L. Williamson, M. C. M. van de Sanden, and R. A. C. M. M. van Swaaij, Material structure of microcrystalline silicon deposited by an expanding thermal plasma, Mater. Res. Soc. Symp. Proc. 762, 527 (2003).

A. M. H. N. Petit, M. Zeman, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Simulation of buffer layers in a-Si:H thin film solar cells deposited with and expanding thermal plasma, Mater. Res. Soc. Symp. Proc. 762, 369 (2003).

M. Zeman, V. Nadazdy, R. A. C. M. M. van Swaaij, R. Durny, and J. W. Metselaar, Evolution of charged gap states in a-Si:H under light exposure, Mater. Res. Soc. Symp. Proc. 762, 39 (2003).

 

2002

E. Pincik, H. Gleskova, J. Mullerova, V. Nadazdy, S. Mraz, L. Ortega, M. Jergel, C. Falcony, R. Brunner, K. Gmucova, M. Zeman, R. A. C. M. M. van Swaaij, M. Kucera, R. Jurani, and M. Zahoran, Properties of semiconductor surfaces covered with very thin insulating overlayers prepared by impacts of low-energy particles, Vacuum 67, 131 (2002).

C. Smit, E. A. G. Hamers, B. A. Korevaar, R. A. C. M. M. van Swaaij, M. C. M. van de Sanden, Fast deposition of micro crystalline silicon with an expanding thermal plasma, J. Non-Cryst. Solids 299, 98 (2002).

B. A. Korevaar, A. M. H. N. Petit, C. Smit, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Effect of buffer layers on p-i-n a-Si:H solar cells deposited at high rate utilising an expanding thermal plasma, in: Proceedings of the 29th IEEE-PVSC, New Orleans, Louisiana, 15-22 May 2002, p. 1230.

C. Smit, B. A. Korevaar, A. M. H. N. Petit, R. A. C. M. M. van Swaaij, W. M. M. Kessels, and M. C. M. van de Sanden, High-rate microcrystalline silicon for solar cells, in: Proceedings of the 29th IEEE-PVSC, New Orleans, Louisiana, 15-22 May 2002, p. 1170.

B. A. Korevaar, C. Smit, A. M. H. N. Petit, R. A. C. M. M. van Swaaij, and M. C. M. van de Sanden, Integration of expanding thermal plasma deposited hydrogenated amorphous silicon in solar cells, Mater. Res. Soc. Symp. Proc. 715, 595 (2002).

 

2001

D. Tahir and R. A. C. M. M. van Swaaij, High Quality Hydrogenated Amorphous Silicon-Germanium Alloys for Grading Purposes at the Intrinsic Layer Tandem Solar Cells, in: Proceedings of SAFE 2001, Veldhoven, the Netherlands, 28-29 November 2001, (STW Technology Foundation, Utrecht, the Netherlands, 2001) p. 191.

C. Smit, E. A. G. Hamers, B. A. Korevaar, R. A. C. M. M. van Swaaij, M. C. M. van de Sanden, Fast deposition of microcrystalline silicon with an expanding thermal plasma, in: Proceedings of SAFE 2001, Veldhoven, the Netherlands, 28-29 November 2001, (STW Technology Foundation, Utrecht, the Netherlands, 2001) p. 182.

Miro Zeman, René A. C. M. M. van Swaaij, Joost J. G. van den Heuvel, and Wim Metselaar, Integrated optical and electrical modeling of a-Si:H based solar cells, Mater. Res. Soc. Symp. Proc. 664, A25.1 (2001).

B. A. Korevaar, C. Smit, R. A. C. M. M. van Swaaij, D. C. Schram, and M. C. M. van de Sanden, Importance of defect density near the p-i interface for a-Si:H solar cell performance, Mater. Res. Soc. Symp. Proc. 664, A24.4 (2001).

M. A. Kroon and R. A. C. M. M. van Swaaij, Spatial effects on ideality factor of amorphous silicon pin diodes, J. Appl. Phys. 90 (2), 994 (2001).

M. Zeman, R. A. C. M. M. van Swaaij, M. Zuiddam, J. W. Metselaar, and R. E. I. Schropp, Effect of front and back contact roughness on optical properties of single junction a-Si:H solar cells, Sol. Energy Mater. Sol. Cells 66, 353 (2001).

 

2000

R. A. C. M. M. van Swaaij, V. Nádaždy, M. Zeman, E. Pinčik, and J. W. Metselaar, Defect re-distribution in amorphous silicon below equilibration temperature, J. Non-Cryst. Solids. 266-269, 553 (2000).

R. A. C. M. M. van Swaaij, B. S. Girwar, and J. W. Metselaar, Powder formation in germane-silane plasmas, J. Vac. Sci. Technol. A. 18 (5), 2116 (2000).

M. A. Kroon, R. A. C. M. M. van Swaaij, and J. W. Metselaar, I,V characteristics of a-Si:H p-i-n diodes with uniform and non-uniform defect distributions, Mater. Res. Soc. Symp.  Proc. 609, A10.3 (2000).

M. A. Kroon, R. A. C. M. M. van Swaaij, and J. W. Metselaar, Miniature high-voltage a-Si:H solar cell for integration in micro-electronic devices, presented at the 16th EPVSEC, Glasgow, U. K. (2000), paper VB1.19.

B. A. Korevaar, C. Smit, R. A. C. M. M. van Swaaij, A. H. M. Smets, W. M. M. Kessels, J. W. Metselaar, D. C. Schram, and M. C. M. van de Sanden, Solar cells with intrinsic a-Si:H deposited at rates larger than 5 Å/s by the expanding thermal plasma, presented at the 16th EPVSEC, Glasgow, U. K. (2000), paper VB1.20.

René van Swaaij and Miro Zeman, Zonnecelonderzoek: werken aan het nieuwste onder de zon!, Maxwell (2), 17 (2000, in Dutch).

R. U. A. Khan, R. A. C. M. M. van Swaaij, A. Vonsovici, and S. R. P. Silva, A-C:H antireflection coatings for a-Si:H solar cells, presented at the 16thEPVSEC, Glasgow, U. K. (2000), paper OC9.4.

R. A. C. M. M. van Swaaij, M. Zeman, S. Arnoult, and J. W. Metselaar, Performance dependence on grading width of a-SiGe:H component solar cells, in: Proceedings of the 28th IEEE-PVSC, Anchorage, Alaska, 15-22 September 2000, p. 869.

B. A. Korevaar, C. Smit, A. H. M. Smets, R. A. C. M. M. van Swaaij, M. C. M. van de Sanden, and D. C. Schram, Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells, in: Proceedings of the 28th IEEE-PVSC, Anchorage, Alaska, 15-22 September 2000, p. 916.

E. Pincik, M. Jergel, M. Kucera, R. A. C. M. M. van Swaaij, J. Ivanco, R. Senderak, M. Zeman, J. Mullerova, and M. Brunel, Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces, Appl. Surf. Sci. 166, 72 (2000).

R. A. C. M. M. van Swaaij, M. Zeman, B. A. Korevaar, C. Smit, J. W. Metselaar, and M. C. M. van de Sanden, Challenges in amorphous silicon solar cell technology, Acta Physica Slovaca 50 (4), 559 (2000).

 

1999

M. Zeman, R. A. C. M. M. van Swaaij, M. Zuiddam, J. W. Metselaar and R. E. I. Schropp, The Role of Front and Back Contact Roughness in the Performance Enhancement of Single Junction a-Si:H Solar Cells, in: Technical Digest of the 11th International Photovoltaic Science and Engineering Conference, Sapporo City, Japan, 20 Sept. 1999, pp. 213-214.

E. Schroten, M. Zeman, R. A. C. M. M. van Swaaij, L. L. A. Vosteen, and J. W. Metselaar, Simulation of hydrogenated silicon germanium alloys for bandgap grading, Mater. Res. Soc. Symp.  Proc. 557, 773 (1999).

M. Zeman, R. A. C. M. M. van Swaaij, M. Zuiddam, and J. W. Metselaar, Effect of interface roughness on light scattering and optical properties of a-Si:H solar cells, Mater. Res. Soc. Symp.  Proc. 557, 725 (1999).  

 

1998

M. A. Kroon, R. A. C. M. M. van Swaaij, M. Zeman, V. I. Kuznetsov, and J. W. Metselaar, Hydrogenated amorphous silicon transverse junction solar cell, Appl. Phys. Lett. 72, 209 (1998).

L. L. A. Vosteen, E. Schroten, R. A. C. M. M. van Swaaij, M. Zeman, and J. W. Metselaar, Low deposition temperature hydrogenated amorphous silicon germanium for tandem solar cells, in: Proceedings of SAFE98, Mierlo, the Netherlands, 1998, edited by J. P. van Veen (STW Technology Foundation, Utrecht, the Netherlands, 1998), p. 599.

M. A. Kroon, R. A. C. M. M. van Swaaij, and J. W. Metselaar, A-Si:H transverse junction solar cells with interdigitated pattern: calculations of efficiency and series resistance, in: Proceedings of SAFE98, Mierlo, the Netherlands, 1998, edited by J. P. van Veen (STW Technology Foundation, Utrecht, the Netherlands, 1998), p. 319.

B. A. Korevaar, W. M. M. Kessels, A. H. M. Smets, B. S. Girwar, M. J. F. van de Sande, J. W. Metselaar, M. C. M. van de Sanden, R. A. C. M. M. van Swaaij, and D. C. Schram, New high rate deposition tool for hydrogenated amorphous silicon (a-Si:H) thin film solar cells, in: Proceedings of SAFE98, Mierlo, the Netherlands, 1998, edited by J. P. van Veen (STW Technology Foundation, Utrecht, the Netherlands, 1998), p. 295.

M. Zeman, R. A. C. M. M. van Swaaij, E. Schroten, L. L. A. Vosteen, and J. W. Metselaar, Device modeling of a-Si:H alloy solar cells: calibration procedure for determination of model input parameters, Mater. Res. Soc. Symp.  Proc. 507, 409 (1998).

M. A. Kroon, R. A. C. M. M. van Swaaij, M. Zeman, and J. W. Metselaar, Study of the design of the a-Si:H transverse junction solar cell, in: Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, Vienna, Austria, 1998, edited by J. Schmid, H. A. Ossenbrink, P. Helm, H. Ehmann, and E. D. Dunlop (Arte Stampa, Daverio (VA), Italy, 1998), p. 914.

M. Zeman, V. Nádazdy, E. Pincik, and R. A. C. M. M. van Swaaij, Band gap states in a-SiGe:H alloys determined from Charge DLTS experiments, in: Proceedings of the ASDAM ’98 Conference, Smolenice Castle, Slovakia, 1998, edited by J. Breza, D. Donoval, V. Drobný, and F. Uherek (IEEE Inc., 1998), p. 19.

 

1997

R. A. C. M. M. van Swaaij, A. D. Annis, B. J. Sealy, and J. M. Shannon, Electronic effects of ion damage in hydrogenated amorphous silicon alloys, J. Appl. Phys. 82, 4800 (1997).

 

1996

René van Swaaij, De ontlading van een fotogeleider, NTvN 62/5, 77 (1996, in Dutch).

J. M. Shannon, S.-M. Chen, G. Oversluizen, R. A. C. M. M. van Swaaij, A. D. Annis and B. J. Sealy, TFD's for high quality AMLCD on low temperature plastics, in: Proceedings of the IDW '96 & AM-LCD '96, Kobe, Japan, 1996, p. 49.

P. A. Bayley, J. M. Marshall, C. Main, D. P. Webb, R. A. C. M. M. van Swaaij, and J. Bezemer, Determination of the density of states in amorphous silicon-carbon alloys using a Fourier transformation of transient photocurrent data, J. Non-Cryst. Solids 198-200, 161 (1996).

 

1995

R. A. C. M. M. van Swaaij, W. P. M. Willems, J. P. Lokker, J. Bezemer, and W. F. van der Weg, Electrophotographic discharge of CdS explained by a surface-depletion discharge model, J. Appl. Phys. 77, 1635 (1995).

W. P. M. Willems, P. L. J. Welten, F. W. Marland, and R. A. C. M. M. van Swaaij, The role of surface charge in low-voltage electrophotography, J. Electrochem. Soc. 142, 1615 (1995).

P. A. Bayley, J. M. Marshall, A. R. Hepburn, R. A. C. M. M. van Swaaij, and J. Bezemer, Hole carrier drift mobility and valence band tail states in amorphous silicon carbide, in: ‘Electronic, Optoelectronic and Magnetic Thin Films’, proceedings of the 8th International School on Condensed Matter Physics, Varna, Bulgaria, 1994, edited by J. M. Marshall, N. Kirov, and A. Vavrek (Research Studies Press Ltd., Taunton, U. K., 1995), p. 440.

 

1994

René van Swaaij, Amorphous Silicon Photoconductive Films for Electrophotography, Ph. D. Thesis, Utrecht University, 1994.

R. A. C. M. M. van Swaaij, A. J. M. Berntsen, W. G. J. H. M. van Sark, H. Herremans, J. Bezemer, and W. F. van der Weg, Local structure and bonding states in a-Si1-xCx:H, J. Appl. Phys. 76, 251 (1994).

S. J. Elmer, J. M. Marshall, R. A. C. M. M. van Swaaij, J. Bezemer, and A. R. Hepburn, Monte Carlo modelling of electrophotographic dark discharge, Mater. Res. Soc. Symp. Proc. 336, 195 (1994).

 

1993

R. A. C. M. M. van Swaaij, W. P. M. Willems, J. Bezemer, M. B. von der Linden, and W. F. van der Weg, The density of states in a-Si:C:H revealed by electrophotography, Mater. Res. Soc. Symp. Proc. 297, 693 (1993).

R. A. C. M. M. van Swaaij, W. P. M. Willems, J. Bezemer, H. J. P. Lokker, and W. F. van der Weg, Degradation of amorphous silicon based photoconductors by corona discharge, Mater. Res. Soc. Symp. Proc. 297, 559 (1993).

R. A. C. M. M. van Swaaij, W. G. J. H. M. van Sark, W. M. Arnoldbik, J. Bezemer, and W. F. van der Weg, Quantitative determination of Si-Hx bonding configurations in a-Si:C:H, in: ‘Electronic and Opto-electronic Materials into the 21st Century’, proceedings of the 7th International School on Condensed Matter Physics, Varna, Bulgaria, 1992, edited by N. Kirov and J. M. Marshall (World Scientific, Singapore, 1993), p. 506.

R. A. C. M. M. van Swaaij, S. J. Elmer, W. P. M. Willems, J. Bezemer, J. M. Marshall, and A. R. Hepburn, Experimental dark discharge of a-Si1-xCx:H films and its comparison to Monte Carlo simulations, J. Non-Cryst. Solids 164-166, 533 (1993).

P. A. Bayley, A. K. Browne, J. M. Marshall, R. A. C. M. M. van Swaaij, and A. R. Hepburn, Study of the temperature and field dependence of electron drift mobility in a-Si1-xCx:H using the time-of-flight technique, J. Non-Cryst. Solids 164-166, 521 (1993).

W. G. J. H. M. van Sark, J. W. Smit, W. M. Arnold Bik, R. A. C. M. M. van Swaaij, M. B. von der Linden, R. E. I. Schropp, J. Bezemer, and W. F. van der Weg, Thickness related effects in p-type amorphous silicon thin films, in: Proceedings of the 11th European Photovoltaic Solar Energy Conference, Montreux, Switzerland, 1992, edited by L. Guimarães, W. Palz, C. de Reyff, H. Kiess, and P. Helm (Harwood Academic Publishers, Chum, Switzerland, 1993), p. 643.

M. B. von der Linden, R. E. I. Schropp, R. Balkema, R. A. C. M. M. van Swaaij, J. Daey Ouwens, W. G. J. H. M. van Sark, J. Bezemer, and W. F. van der Weg, Influence on de DOS profile in a-Si:H of bandgap variations with and without carbon alloying, in: Proceedings of the 11th European Photovoltaic Solar Energy Conference, Montreux, Switzerland, 1992, edited by L. Guimarães, W. Palz, C. de Reyff, H. Kiess, and P. Helm (Harwood Academic Publishers, Chum, Switzerland, 1993), p. 684.

 

1992

H. Herremans, W. Grevendonk, R. A. C. M. M. van Swaaij, W. G. J. M. van Sark, A. J. M. Berntsen, W. M. Arnold Bik, and J. Bezemer, Structural, compositional and optical properties of hydrogenated amorphous silicon-carbon alloys, Philos. Mag. B 66, 787 (1992).