Sentech F1
Apparatus | Sentech Etchlab 200 |
Supplier | Sentech Instruments |
Location |
P.00.390 |
Function | RIE plasma etching of Si, dielectric layers and some metals |
Gasses | SF6, O2, He, Ar |
Sources | RF generator 13.56 MHz 600W air cooled |
Cooling system | not actively fan cooling |
System layout | Direct load i.e. insert sample via top-lid |
Chuck | 200 mm Electrode is covered with a 200mm quartz plate |
Process information | Si , W , Ge , NbTiN , Si3N4 , SiO2, anisotropic photoresist etch, descumm |
Facilities | Sentech laser interferometer SLI670(nm) plus software |
Specimen | Max. 200 mm wafers, smaller pieces possible |
Equipment owner | Ing. Charles de Boer
R. v.d. Kolk (back-up) +31 634321301
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