NEB22 Recipe

Substrate preparation: Spincoat wafer with HMDS and bake at 200°C for 2 minutes

tone

negative

special

chemical amplified resist; very sensitive with reasonable resolution

reference

http://www.sciencedirect.com/science/article/pii/S0167931700003567

Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

A.J. van Didewaard, W.S.M.M. Ketelaars, R.F.M. Roes, J.A.J. Kwinten, F.C.M.J.M. van Delft, A.J. van Run, A.K. van Langen-Suurling, and J. Romijn, Microelectronic Engineering, 53, (2000), 461-464

spincoat

2000rpm 277nm

4000rpm 200nm

6000rpm 150nm

prebake

on thick plate in oven: 2 minutes @ 110°C

exposure time

about 18μC/cm² @100kV for 1μm lines and spaces

postbake

on thick plate in oven: 2 minutes @ 105°C

development

30s in MF322

15s in MF322 : demi-water = 1:9

15s in MF322 : demi-water = 1:9         (fresh bath)

15s in demi-water

15s in demi-water                                 (fresh bath)

During development wafer should be held vertical and please move it!!!

removal

NEB22 can be removed from your sample with PRS3000 or NMP

remakrs

Long lines with widths smaller than about 53nm tend to fall over under their own weight,  possibly due to internal stresses.