Dry Etch Recipe AZ 1420 resist in Oxygen Based RIE
Recipe
Gases: | |
O2 | 20 sccm |
Pressure | 4 Pa |
RF Power | 40-50 W |
Bias potential | -180 V |
Etch characteristics
Etch rate: 20 nm/min |
Anisotropy: 100 % |
Selectivity
Selective over all non-organic materials |
Remarks
Etch rate does not depend on bake temperature of the resist |
Large aspect ratio dependence; over etch may be required |
Reproducibility: 5 % |
This process is also used for descumming (15-20 s) and sharpening resist profiles |