Dry Etch Recipe for Silicon in Fluorine based RIE
Recipe
| Gasses: | |
| SF6 | 12.5 ssccm |
| O2 | 2.5 sccm |
| He | 10 sccm |
| Pressure | 1 Pa |
| RF Power | 40 W |
| Substrate temperature | ambient |
Etch characteristics
| Etch rate: 15-20 nm/min |
| Anisotropy: 80 % |
Remarks
| ER depends on content 02 temperature substrate |
| Anisotropy depends strongly on 02 content |
| Reproducibility is poor, needs proper conditioning of chamber |