Dry Etching of Siliconoxide in AMS 100
Recipe Oxide etch VII
Etching: | |
C4F8 | 20 sccm |
| He | 100 sccm |
| CH4 | 10 sccm |
Pressure | 100% |
| RF ICP Power | 2500 W |
| Bias voltage SH | 28 V |
| Substrate temperature | 0 °C |
| Position | 120 mm |
Etch characteristics
| Etch Rate: 150 nm/min |
| Anisotropic |