Dry Etching Recipe for Aluminium Oxide in Chlorine based ICP
Recipe
| Gasses: | step 1 |
BCl3 | 20 sccm |
| Pressure | 0,3 Pa |
| ICP Power | 1250 W |
| RF Power | 100 W |
| Bias potential | |
| Temperature: | 50 °C |
Etch characteristics
| Anisotropic, but can become isotropic. |
Remarks
| The native oxide will strongly delay the onset of etching. |