Publications of QIT

  • Li, Y, Gheytaghi, AM, Trifunovic, M, Xu, Y, Zhang, GQ & Ishihara, R 2021, 'Wafer-level direct bonding of optimized superconducting NbN for 3D chip integration', Physica C: Superconductivity and its Applications, vol. 582, 1353823.
  • Xu, Y, Unseld, FK, Corna, A, Zwerver, AMJ, Sammak, A, Brousse, D, Samkharadze, N, Amitonov, SV, Veldhorst, M, Scappucci, G, Ishihara, R & Vandersypen, LMK 2020, 'On-chip integration of Si/SiGe-based quantum dots and switched-capacitor circuits', Applied Physics Letters, vol. 117, no. 14, 144002.
  • Hiraoka, S, Horibe, K, Ishihara, R, Oda, S & Kodera, T 2020, 'Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures', Applied Physics Letters, vol. 117, no. 7, 074001.
  • Shimatani, N, Yamaoka, Y, Ishihara, R, Andreev, A, Williams, DA, Oda, S & Kodera, T 2020, 'Temperature dependence of hole transport properties through physically defined silicon quantum dots', Applied Physics Letters, vol. 117, no. 9, 094001, pp. 094001-1 - 094001-5.
  • Tenorio Pearl, O., Mouris, R., & Ishihara, R. (2019). Diamond colour centers for quantum internet and sensors. Maxwell-periodiek der electrotechnische vereeniging, 22(3), 26-29.
  • Toshiki Iwai, Oscar Tenorio Pearl, Ryoichi Ishihara, “Integration of single crystal diamond photonic crystal on silicon substrate for quantum computer”, Hasselt Diamond Workshop 2020
  • Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material, Alfaro, J. A., Sberna, P. M., Silvestri, C., Mastrangeli, M., Ishihara, R. & Sarro, P. M., 2018, 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018. Piscataway, NJ: IEEE, Vol. 2018-January. p. 547-550 4 p.
  • A Si/SiGe based quantum dot with floating gates for scalability Y.Xu, A. Corna, N. Samkharadze, M. Veldhorst, R. Ishihara and L. M. K.Vandersypen, Silicon Quantum Electronics Workshop  2018  13th ‐15th of November 2018  Sydney, Australia
  • Miki Trifunovic, Andrea Corna, Nodar Samkharadze, Lieven Vandersypen, Ryoichi Ishihara Silicon, “Cryogenic DRAM-based voltage controller integrated with Si/SiGe quantum dot”, Quantum Electronics Workshop, 2017
  • L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber and M. Veldhorst; “Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent”, npj Quantum Information, 3, Article number 34 (2017); doi:10.1038/s41534-017-0038-y


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