Oxford PECVD

Apparatus

Plasmalab 80 Plus

Supplier

Oxford Instruments Plasma Technology; www.oxinst.com

Location

P00.350

Main purpose

PE-CVD

System layout

open load, parallel plate system

Gasses

SiH₄, N₂, Ar, NH₃, N₂O, CH₄, CF₄

Power supply

300W RF source and 500W LF source

Process information

deposition of SiO₂, Si₃N₄ and SiC at 300°C and a-Si at 250°C

Facilities

max. 400°C aluminum substrate electrode, 240mm diameter

frequency mixing possible to minimize film stress

Specimen

max. 8 inch wafer, small pieces allowed

Equipment owner

Marinus Fischer

m.fischer@tudelft.nl

+31 628906207

Charles de Boer (back-up)

C.R.deBoer@tudelft.nl