Recipe
| Gasses: | |
BCl3 | 15.0 sccm |
Cl2 | 15.0 sccm |
He | 17.5 sccm |
| Pressure | 2.00 Pa |
| RF Power | 65 W |
| Substrate temperature | 20 °C |
Etch characteristics
| Etch rate: 80 nm/min |
Remarks
| This process is used for PMMA as top layer of three layer mask. |
| Gasses: | |
BCl3 | 15.0 sccm |
Cl2 | 15.0 sccm |
He | 17.5 sccm |
| Pressure | 2.00 Pa |
| RF Power | 65 W |
| Substrate temperature | 20 °C |
| Etch rate: 80 nm/min |
| This process is used for PMMA as top layer of three layer mask. |