Dry Etch Recipe for PMMA in Chlorine Based RIE

Recipe

Gasses:

BCl3

15.0 sccm

Cl2

15.0 sccm

He

17.5 sccm
Pressure2.00 Pa
RF Power65 W
Substrate temperature20 °C

Etch characteristics

Etch rate: 80 nm/min

Remarks

This process is used for PMMA as top layer of three layer mask.