Dry Etch Recipe for W (cvd) in Chlorine Based RIE
Recipe
Gasses: | |
BCl3 | 15.0 sccm |
Cl2 | 15.0 sccm |
He | 17.5 sccm |
Pressure | 1.00 Pa |
RF Power | 65 W |
Substrate temperature: | 10 °C |
Etch characteristics
Etch rate: 27 nm/min |
Anisotropy: 90 % |
Selectivity
Etch rate of AZ 1420: 75 nm/min |
Remarks
Considerable loading effect |
Almost no aspect ratio dependence |
Etch rate increases with the amount of incorporated oxygen |
Reproducibility: 20% |
The wafer heats up considerably during etching. (mask choice!) |
Recommended mask is hard baked AZ 1420 or HPR (120 °C) |