H. (Hanzhi) Xun
H. (Hanzhi) Xun
Profile
Hanzhi Xun received the B.Sc. and M.Eng. degrees from Xidian University, Xi'an, China, in 2018 and 2021, respectively. He also received M.Eng. degree form Waseda University, Kitakyushu, Japan, in 2021. He is currently working toward the Ph.D. degree at the Computer Engineering Laboratory, Delft University of Technology, Delft, The Netherlands. His research interests focus on device modeling, testing, and reliability of Resistive RAMs.
Expertise
Publications
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2023
Characterization and Test of Intermittent Over RESET in RRAMs
Hanzhi Xun / Moritz Fieback / Sicong Yuan / Hassen Aziza / Mathijs Heidekamp / Thiago Copetti / Leticia Bolzani Poehls / Mottaqiallah Taouil / Said Hamdioui
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2023
Data Background-Based Test Development for All Interconnect and Contact Defects in RRAMs
Hanzhi Xun / Moritz Fieback / Sicong Yuan / Ziwei Zhang / Mottaqiallah Taouil / Said Hamdioui
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2023
Device-Aware Test for Back-Hopping Defects in STT-MRAMs
Sicong Yuan / Mottaqiallah Taouil / Moritz Fieback / Hanzhi Xun / Erik Jan Marinissen / Gouri Sankar Kar / Sidharth Rao / Sebastien Couet / Said Hamdioui
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2023
Device-Aware Test for Ion Depletion Defects in RRAMs
Hanzhi Xun / Sicong Yuan / Moritz Fieback / Mottaqiallah Taouil / Said Hamdioui / Hassen Aziza
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2023
Magnetic Coupling Based Test Development for Contact and Interconnect Defects in STT-MRAMs
S. Yuan / Z. Zhang / M. Fieback / H. Xun / E. J. Marinissen / G. S. Kar / S. Rao / S. Couet / M. Taouil / S. Hamdioui
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