Dry Etch Recipe for InP in Chlorine based ICP
Recipe
| Gases: | |
Cl2 | 25 sccm |
N2 | 75 sccm |
| Pressure | 1.00 Pa |
| RF Power | 1000 W |
| Bias potential | -100 V |
| Temperature | 190 °C |
Etch characteristics
| Etch rate: 20 nm/min |
| Anisotropy: 100 % |
Selectivity
| Selective over all non-organic materials |
Remarks
| Etch rate does not depend on bake temperature of the resist |
| Large aspect ratio dependence; over etch may be required |
| Reproducibility: 5 % |
| This process is also used for descumming (15-20 s) and sharpening resist profiles |