Dry Etch Recipe for Silicon in Chlorine Based RIE
Recipe
| Gasses: | |
| O2 | 20 sccm |
| Pressure | 4 Pa |
| RF Power | 40-50 W |
| Bias potential | -180 V |
Etch characteristics
| Etch rate: 20 nm/min |
| Anisotropy: 100 % |
Selectivity
| Selective over all non-organic materials |
Remarks
| Etch rate does not depend on bake temperature of the resist |
| Large aspect ratio dependence; over etch may be required |
| Reproducibility: 5 % |
| This process is also used for descumming (15-20 s) and sharpening resist profiles |