Dry Etch Recipe for Ta in Fluorine AMS 100 Cryo

Recipe

Gasses:

SF6

300.0 sccm

O2

15.0 sccm

 

Pressure1.80 Pa
ICP Power1100 W
rf bias-136 V
Substrate temperature-30 °C

Etch characteristics

Etch rate: 78 nm/min @ -30 C
Temperature dependenceR(T)=581.65 e-1483.37/T [T in Kelvin]
Graph:

Remarks

Below -60 C, etching becomes sputtering.
Etch rate dependence on rf biasing not yet investigated.
Reproducible within 1 nm